Generalrequirement:Bachelorormasterdegreeabove,graduatedfromEE,physics,electricalmaterialscienceandrelatedfield.Morethan3years’workexperienceinpowerdiscretedesignandsimulation.Responsibility:a.Beinchargeofdevicedesignanddevelopment,includingtrenchMOSFET,SGT,SuperJunctionMOSFET,LDMOS,IGBT,andotherdevices.b.Workincludingprocesssimulation,devicesimulation,layout,devicecharacterization,devicereliabilityandqualification.c.Releasethedevicedesignruletootherteam.Specialrequirement:a.SkilledinTCADsoftware.b.Candrawtestpatternlayoutwithlayouttools.c.Skilledindevicecharacterizationinstruments,suchasB1505,HP4155,HP8753DandHP4284.d.Basicknowledgeinsemiconductorprocessflow.语言要求:不限
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